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PLI designs a wide range of devices in multiple material systems. The laser and detector device design team is internationally recognized, specifically in the area of high power lasers, avalanche photodiodes, and band gap engineered InGaAs detector arrays.
Examples include:
- High power, InGaAsP laser arrays in the eye-safe (1.5 um) region that have best-in-class power and beam quality performance
- GaAs based super-luminescent diodes with unmatched wavelength and power stability over life
- InGaAs APD devices optimized for single photon detection applications, and best-in-class performance for dark count rate. detection efficiency, and timing jitter
- Bandgap-engineered, extended wavelength InP-based detector arrays with very low dark noise performance
- High pixel count InGaAs detector arrays with zero pixel defects
Additionally, PLI is pursuing forward-looking research in the area of superlattice InP and GaSb detectors, primarily focused at displacing legacy InSb and MCT material systems at MWIR and LWIR wavelengths.
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