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PLI designs a wide range of optoelectronic devices in the III-V semiconductor materials systems. The work of the company’s detector and laser design team is recognized internationally in the area of avalanche photodiodes and high power lasers. This team has focused on product development and R&D for devices such as:
Examples include:
- High pixel count InGaAs detector arrays in 1-D and 2-D formats using p-i-n and APD detectors
- InGaAs avalanche photodiodes (APDs) achieving record performance for single photon detection applications at both 1.55 um and 1.06 um
- Large-area low-noise InGaAs APDs for ladar/lidar applications between 0.95 and 1.65 um
- Bandgap-engineered, extended long-wavelength cutoff InP-based p-i-n and APD detectors
- High-power InGaAsP multi-mode diode laser discretes, bars, and stacks in the eye-safe (1.5 um) region with best-in-class power and efficiency
- High-power InGaAsP single-mode diode lasers between 1300 and 1850 nm
- GaAs-based super-luminescent diodes with unmatched wavelength and power stability over life
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